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International Journal of Physics and Applications
Peer Reviewed Journal

Vol. 7, Issue 1, Part C (2025)

Enhanced H2S Sensing properties of Cu-Doped ZnO Thin Film

Author(s):

Savita Dange, Sharad Dange and Pravin More

Abstract:

In this work an enhanced H2S gas sensing response of Cu-doped ZnO thin film synthesized by chemical bath deposition method has been reported. The film exhibits a linear increase in sensitivity from 5.1 to 30.1 as H₂S concentration increases from 10 to 100 ppm. The sensor exhibited a response time ranging from 139 to 194 seconds, whereas the recovery time was between 735 and 1487 seconds for H₂S concentrations between 10 and 100 ppm. The study suggests an efficient gas sensing behavior of Cu-doped ZnO sensor with low recovery time at lower concentrations (≤ 25 ppm).

Pages: 228-232  |  84 Views  48 Downloads


International Journal of Physics and Applications
How to cite this article:
Savita Dange, Sharad Dange and Pravin More. Enhanced H2S Sensing properties of Cu-Doped ZnO Thin Film. Int. J. Phys. Appl. 2025;7(1):228-232. DOI: 10.33545/26647575.2025.v7.i1c.150
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