Vol. 7, Issue 2, Part D (2025)

Fluorine-doped ZnO (F:ZnO) thin films were synthesized using a newly developed spray chemical vapor deposition (spray-CVD) technique, and their structural, morphological, electrical and optical properties were comprehensively studied. X-ray diffraction revealed that all films retained the hexagonal wurtzite phase with strong (002) orientation, while maximum crystallinity was achieved at 0.2 at.% F. Surface analyses (SEM, FESEM, AFM) confirmed that optimal doping produced dense, uniform spherical grains with minimal roughness, whereas higher F contents led to irregular growth and agglomeration. Electrical measurements showed enhanced carrier concentration and mobility, yielding the lowest resistivity at 0.2 at.% F due to substitutional incorporation of F⁻ ions into O²⁻ sites and effective defect passivation. Optical studies indicated ~92% transmittance in the visible range, bandgap widening via the Burstein-Moss effect, and reduced Urbach energy, reflecting improved film quality. 0.2 at.% F provided the best balance of structural, electrical, and optical properties. These findings establish spray-CVD as a cost-effective and scalable route for fabricating high-quality F-doped ZnO thin films for transparent conducting oxides, optoelectronic devices, and sensor applications.